AMD Phenom II X4 965 BE 125W
AMD Phenom II X4 965 BE 125W PDF Print E-mail
Written by Jeff_Tom   
Wednesday, 04 November 2009 04:16
Article Index
AMD Phenom II X4 965 BE 125W
Test system, Oveclocking, Power Consumption
Conclusion
All Pages

 

Similarly as they did with the original Phenom processor lineup AMD have made some improvements in their Phenom II line up and today announced new 125W Phenom II X4 965 BE processors. Previously the TDP rating was 140W, which follows a similar pattern the Phenom 9950 had. You won't see any difference in benchmarks, unless of course you overclock this higher which AMD also claims the new chips should do. It also looks like AMD is trying to clear out of their stock of Phenom II X2 and X3 processors. We don't be doing any benchmarks but there are overclocking numbers, power consumption numbers, and voltage numbers.

 

Here are the technical specifications on the Phenom II X4 965BE processor.

New Phenom II Processor Specifications:
Model Number & Core Frequency: X4 965 / 3.4GHz (Black Edition)
OPN: HDZ965FBK4DGM ß“M” indicates new revision
L1 Cache Sizes: 64K of L1 instruction and 64K of L1 data cache per core (512KB total L1 per processor)
L2 Cache Sizes: 512KB of L2 data cache per core (2MB total L2 per processor)
L3 Cache Size: 6MB (shared)
Total Cache (L2+L3): 8MB
Memory Controller Type: Integrated 128-bit wide memory controller *
Memory Controller Speed: Up to 2.0GHz with Dual Dynamic Power Management
Types of Memory Supported: Unregistered DIMMs up to PC2-8500 (DDR2-1066MHz) -AND- PC3-10600 (DDR3-1333MHz)
HyperTransport 3.0 Specification: One 16-bit/16-bit link @ up to 4.0GHz full duplex (2.0GHz x2)
Total Processor-to-System Bandwidth: Up to 37.3GB/s total bandwidth [Up to 21.3 GB/s memory bandwidth (DDR3-1333) + 16.0GB/s (HT3)]
Up to 33.1GB/s total bandwidth [Up to 17.1 GB/s memory bandwidth (DDR2-1066) + 16.0GB/s (HT3)]
Packaging: Socket AM3 938-pin organic micro pin grid array (micro-PGA)
Fab location: GLOBALFOUNDARIES Fab 1 module 1 in Dresden, Germany (formerly AMD Fab 36)
Process Technology: 45-nanometer DSL SOI (silicon-on-insulator) technology
Approximate Die Size: 258mm2
Approximate Transistor count: ~758 million
Max Temp: 62o Celsius
Nominal Voltage: 0.825-1.4V
Max TDP: 125 Watts
*Note: configurable for dual 64-bit channels for simultaneous read/writes